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 ZXMN4A06K 40V N-channel enhancement mode MOSFET
Summary
V(BR)DSS= -40V; RDS(ON) = 0.05 ; ID = 10.9A
Description
This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
Features
* * * * * Low on-resistance Fast switching speed Low threshold Low gate drive DPAK package
D
G S
Applications
* * * * DC - DC converters Audio output stages Relay and solenoid driving Motor control
Ordering information
Device ZXMN4A06KTC Reel size (inches) 13 Tape width (mm) 16 Quantity per reel 2,500
Device marking
ZXMN 4A06
Pinout - Top view
Issue 1 - March 2006
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ZXMN4A06K
Absolute maximum ratings
Parameter Drain-source voltage Gate-source voltage Continuous drain current: VGS=10V; TA=25C (b) VGS=10V; TA=70C (b) VGS=10V; TA=25C (a) Pulsed drain current (c) Continuous source current (body diode)
(b)
Symbol VDSS VGS
Limit 40 20 10.9
Unit V V A A A A A A W mW/C W mW/C W mW/C C
ID
8.7 7.2
IDM IS ISM PD PD PD
35.3 10.8 35.3 4.2 33.6 9.5 76 2.15 17.2 -55 to +150
Pulsed source current (body diode) (c) Power dissipation at TA=25C (a) Linear derating factor Power dissipation at TA=25C (b) Linear derating factor Power dissipation at TA=25C (d) Linear derating factor
Operating and storage temperature range Tj:Tstg
Thermal resistance
Parameter Junction to ambient (a) Junction to ambient (b) Junction to ambient (d) Symbol R JA R JA R JA Value 30 13.2 58 Unit C/W C/W C/W
NOTES: (a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300 s - pulse width limited by maximum junction temperature. (d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
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ZXMN4A06K
Characteristics
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ZXMN4A06K
Electrical characteristics (at TA = 25C unless otherwise stated)
Parameter Static Drain-source breakdown voltage Gate-body leakage V(BR)DSS 40 1 100 1.0 0.050 0.075 gfs 11.5 S V A nA V ID=250 A, VGS=0V VDS=40V, VGS=0V VGS=20V, VDS=0V ID=250 A, VDS= VGS VGS=10V, ID=4.5A VGS=4.5V, ID=3.2A VDS=15V,ID=4.5A Symbol Min. Typ. Max. Unit Conditions
Zero gate voltage drain current IDSS IGSS RDS(on) Gate-source threshold voltage VGS(th) Static drain-source on-state resistance (*) Forward transconductance() Dynamic () Input capacitance Output capacitance Reverse transfer capacitance Switching () () Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Source-drain diode Diode forward voltage(*) Reverse recovery time() Reverse recovery charge() VSD 0.83 16 9 td(on) tr td(off) tf Qg Qgs Qgd 3.2 3.8 23.3 10.9 17.1 2.41 3.4 Ciss Coss Crss 827 133 84
pF pF pF VDS=20 V, VGS=0V, f=1MHz
ns ns ns ns nC nC nC VDS=20V,VGS=10V, ID=4.5A (refer to test circuit) VDD =20V, ID=1A RG=6.0 , VGS=10V (refer to test circuit)
0.95
V ns nC
TJ=25C, IS=4.5A, VGS=0V TJ=25C, IF=4A, di/dt= 100A/ s
trr
Qrr
NOTES: (*) Measured under pulsed conditions. Width 300 s. Duty cycle 2%. () Switching characteristics are independent of operating junction temperature. () For design aid only, not subject to production testing.
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ZXMN4A06K
Typical charactersitics
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ZXMN4A06K
Typical characteristics
Current regulator
QG
12V 50k Same as D.U.T
VG
QGS
QGD
VDS IG D.U.T ID VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS 90%
VGS RG RD VDS VCC
10% VGS td(on) t(on) tr td(off) t(on) tr
Switching time waveforms
Switching time test circuit
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ZXMN4A06K
Intentionally left blank
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ZXMN4A06K
Package details - DPAK
Package dimensions
Dim. A A1 b b2 b3 c c2 D D1 E E1 Inches Min. Max. 0.086 0.094 0.005 0.020 0.035 0.030 0.045 0.205 0.215 0.018 0.024 0.018 0.023 0.213 0.245 0.205 0.250 0.265 0.170 Millimeters Min. Max. 2.18 2.39 0.127 0.508 0.89 0.762 1.14 5.21 5.46 0.457 0.61 0.457 0.584 5.41 6.22 5.21 6.35 6.73 4.32 Dim. e H L L1 L2 L3 L4 L5 1 Inches Min. Max. 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.065 0.025 0.040 0.045 0.060 0 10 0 15 Millimeters Min. Max. 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.508 BSC 0.89 1.65 0.635 1.016 1.14 1.52 0 10 0 15 -
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com
Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com
Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com
Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
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(c) Zetex Semiconductors plc 2005
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